Research Article

The Effect of Annealing Temperature and KCN Etching on the Photovoltaic Properties of Cu(In,Ga)(S,Se)2 Solar Cells Using Nanoparticles

Figure 3

Cross-sectional and surface SEM images of CIGS films annealed at temperatures of 500 ((a), (b)), 520 ((c), (d)), 540 ((e), (f)), and 560°C ((g), (h)) for 30 min under a selenium vapor ambience.
416245.fig.003a
(a)
416245.fig.003b
(b)
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(c)
416245.fig.003d
(d)
416245.fig.003e
(e)
416245.fig.003f
(f)
416245.fig.003g
(g)
416245.fig.003h
(h)