The Effect of Annealing Temperature and KCN Etching on the Photovoltaic Properties of Cu(In,Ga)(S,Se)2 Solar Cells Using Nanoparticles
Figure 3
Cross-sectional and surface SEM images of CIGS films annealed at temperatures of 500 ((a), (b)), 520 ((c), (d)), 540 ((e), (f)), and 560°C ((g), (h)) for 30 min under a selenium vapor ambience.