Research Article
Numerical Analysis of Copper-Indium-Gallium-Diselenide-Based Solar Cells by SCAPS-1D
Table 1
Baseline parameters for modelling CIGS solar cells.
| | | Layer Properties | | | CIGS | OVC | CdS | i-ZnO | ZnO : B |
| | W (nm) | Variable | 30 | 50 | 200 | 400 | | (eV) | Graded | 1.3 | 2.4 | 3.3 | 3.3 | | Χ (eV) | 4.5 | 4.5 | 4.45 | 4.55 | 4.55 | | 13.6 | 13.6 | 10 | 9 | 9 | | (cm−3) | 2.2 * 1018 | 2.2 * 1018 | 1.3 * 1018 | 3.1 * 1018 | 3 * 1018 | | (cm−3) | 1.5 * 1019 | 1.5 * 1018 | 9.1 * 1018 | 1.8 * 1019 | 1.8 * 1019 | | (cm/s) | 3.9 * 107 | 3.9 * 107 | 3.1 * 107 | 2.4 * 107 | 2.4 * 107 | | (cm/s) | 1.4 * 107 | 1.4 * 107 | 1.6 * 107 | 1.3 * 107 | 1.3 * 107 | | (cm2/Vs) | 100 | 10 | 72 | 100 | 100 | | (cm2/Vs) | 12.5 | 1.25 | 20 | 31 | 31 | | Doping (cm−3) | Variable (a) | 1013 (a) | 5 * 1017 (d) | 1017 (d) | 1020 (d) |
| | | Bulk defect properties |
| | N (cm−3) | 1014 (D) | 1014 | 5 * 1016 (A) | 1016 (A) | 1016 (A) | | (cm2) | 10−15 | 10−15 | 10−15 | 10−15 | 10−15 | | (cm2) | 10−11 | 10−11 | 5 * 10−13 | 5 * 10−13 | 5 * 10−13 |
| | Interface | | Interface properties | | | CIGS/OVC | OVC/CdS |
| | (eV) | | 0.0 | 0.0 | | N (cm2) | | 1011 (N) | 3 * 1013 (N) | | (cm2) | | 10−15 | 10−15 | | (cm2) | | 10−15 | 10−15 |
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(a) and (d) denote shallow acceptor and donor defect while (A), (D), and (N) denote deep acceptor, donor, and neutral defects.
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