Table of Contents Author Guidelines Submit a Manuscript
International Journal of Photoenergy
Volume 2013 (2013), Article ID 431614, 7 pages
http://dx.doi.org/10.1155/2013/431614
Research Article

Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells

1Department of Materials Science and Engineering, National Dong Hwa University, Hualien 97401, Taiwan
2Department of Electro-Optical Engineering, Southern Taiwan University of Science and Technology, Tainan 710, Taiwan
3Institute of Photonic System, National Chiao Tung University, Tainan 71150, Taiwan

Received 16 September 2013; Accepted 30 October 2013

Academic Editor: Jimmy Yu

Copyright © 2013 Ing-Song Yu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. M. A. Green, J. Zhao, and A. Wang, “23% module and other silicon solar cell advances,” in Proceedings of 2nd World Conference on Photovoltaic Energy Conversion, vol. 1187, 1998.
  2. F. Werner, B. Veith, V. Tiba et al., “Very low surface recombination velocities on p—and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide,” Applied Physics Letters, vol. 97, no. 16, Article ID 162103, 2010. View at Publisher · View at Google Scholar · View at Scopus
  3. K. Bothe, R. Sinton, and J. Schmidt, “Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon,” Progress in Photovoltaics, vol. 13, no. 4, pp. 287–296, 2005. View at Publisher · View at Google Scholar · View at Scopus
  4. J. Zhao and A. Wang, “Rear emitter n-type passivated emitter, rear totally diffused silicon solar cell Structure,” Applied Physics Letters, vol. 88, no. 24, Article ID 242102, 2006. View at Publisher · View at Google Scholar · View at Scopus
  5. B. G. Lee, J. Skarp, V. Malinen, S. Li, S. Choi, and H. M. Branz, “Excellent passivation and low reflectivity Al2O3/TiO2 bilayer coating for n-wafer silicon solar cells,” in Proceedings of 38th IEEE Photovoltaic Specialists Conference (PVSC '12), 2012.
  6. A. G. Aberle, “Surface passivation of crystalline silicon solar cells: a review,” Progress in Photovoltaics, vol. 8, pp. 473–487, 2000. View at Google Scholar
  7. E. Fourmond, G. Dennler, R. Monna, M. Lemiti, A. Fave, and A. Laugier, “UVCVD silicon nitride passivation and ARC layers for multicrystalline solar cells,” Solar Energy Materials and Solar Cells, vol. 65, no. 1, pp. 297–301, 2001. View at Publisher · View at Google Scholar · View at Scopus
  8. A. F. Thomson, S. Z. Lynn, and K. R. McIntosh, “Passivation of silicon by negatively charged TiO2,” in Proceedings of 25th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC '05), vol. 1146, 2010.
  9. A. F. Thomson and K. R. Mclntosh, “Degradation of oxide-passivated boron-diffused silicon,” Applied Physics Letters, vol. 95, Article ID 052101, 2009. View at Google Scholar
  10. B. S. Richards, J. E. Cotter, and C. B. Honsberg, “Enhancing the surface passivation of TiO2 coated silicon wafers,” Applied Physics Letters, vol. 80, no. 7, pp. 1123–1125, 2002. View at Publisher · View at Google Scholar · View at Scopus
  11. B. S. Richards, “Single-material TiO2 double-layer antireflection coatings,” Solar Energy Materials and Solar Cells, vol. 79, no. 3, pp. 369–390, 2003. View at Publisher · View at Google Scholar · View at Scopus
  12. L. M. Doeswijk, H. H. C. De Moor, D. H. A. Blank, and H. Rogalla, “Passivating TiO2 coatings for silicon solar cells by pulsed laser deposition,” Applied Physics A, vol. 69, no. 7, pp. S409–S411, 1999. View at Publisher · View at Google Scholar · View at Scopus
  13. P. Vitanov, G. Agostinelli, A. Harizanova et al., “Low cost surface passivation for p-type mc-Si based on pseudobinary alloys (Al2O3)x(TiO2)1−x,” Solar Energy Materials and Solar Cells, vol. 90, no. 15, pp. 2489–2495, 2006. View at Publisher · View at Google Scholar · View at Scopus
  14. S. M. George, “Atomic layer deposition: an overview,” Chemical Reviews, vol. 110, no. 1, pp. 111–131, 2010. View at Publisher · View at Google Scholar · View at Scopus
  15. H.-E. Cheng, C.-M. Hsu, and Y.-C. Chen, “Substrate materials and deposition temperature dependent growth characteristics and photocatalytic properties of ALD TiO2 films,” Journal of the Electrochemical Society, vol. 156, no. 8, pp. D275–D278, 2009. View at Publisher · View at Google Scholar · View at Scopus
  16. A. Cuevas and D. Macdonald, “Measuring and interpreting the lifetime of silicon wafers,” Solar Energy, vol. 76, no. 1–3, pp. 255–262, 2004. View at Publisher · View at Google Scholar · View at Scopus
  17. K. Dirscherl, I. Baikie, G. Forsyth, and A. Van der Heide, “Utilisation of a micro-tip scanning Kelvin probe for non-invasive surface potential mapping of mc-Si solar cells,” Solar Energy Materials and Solar Cells, vol. 79, no. 4, pp. 485–494, 2003. View at Publisher · View at Google Scholar · View at Scopus
  18. D. R. G. Mitchell, D. J. Attard, and G. Triani, “Transmission electron microscopy studies of atomic layer deposition TiO2 films grown on silicon,” Thin Solid Films, vol. 441, no. 1-2, pp. 85–95, 2003. View at Publisher · View at Google Scholar · View at Scopus
  19. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 2nd edition, 1981.
  20. E. D. Palik, Handbook of Optical Constants of Solids, vol. 1, 1991.
  21. G. E. Jellison Jr., L. A. Boatner, J. D. Budai, B.-S. Jeong, and D. P. Norton, “Spectroscopic ellipsometry of thin film and bulk anatase (TiO2),” Journal of Applied Physics, vol. 93, no. 12, pp. 9537–9541, 2003. View at Publisher · View at Google Scholar · View at Scopus