Double Ion Implantation and Pulsed Laser Melting Processes for Third Generation Solar Cells
Figure 2
ToF-SIMS Ti concentration depth profile for the single implanted samples and for the double implanted samples before and after PLM. The single implanted set of samples were PLM processed at 0.8 Jcm−2 and the double implanted were PLM processed at 1.8 Jcm−2.
