Effect of Annealing Temperature on CuInSe<sub><b>2</b></sub>/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation

<table>XRD results of CIS films prepared at temperature (a) room temperature, (b) 250°C, (c) 300°C, and (d) 350°C.</table>

International Journal of Photoenergy

Figure 4: Effect of Annealing Temperature on CuInSe<sub><b>2</b></sub>/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation 