Effect of Annealing Temperature on CuInSe₂/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation

Table 3

Efficiency of CuInSe₂ : ZnS solar cell at produced room temperature and annealing temperature of 100°C.

Sample	Annealing temperature (°C)	Current density, 𝐽  (mA/cm^2)	Open-circuit voltage (V)	Fill factor FF	Efficiency (%)
4000_room temperature	27	8.65	0.20	0.36	0.99
4000_100	100	1.92	1.96	0.33	1.12