Simulation and Experimental Study of Photogeneration and Recombination in Amorphous-Like Silicon Thin Films Deposited by 27.12 MHz Plasma-Enhanced Chemical Vapor Deposition

Table 2

The properties of a-Si:H-like films compared to those of typical a-Si:H films.

	a-Si:H	a-Si:H-like
Crystallinity (%)	—	12
Dark conductivity (Ω^−1 cm^−1)	1 × 10^−10	2.3 × 10^−10
Photo conductivity (Ω^−1 cm^−1)	1 × 10^−5	6.1 × 10^−4
Defect density (cm^−3)	~10^16	10^15
Hydrogen content (at.%)	15	10
Absorptivity at 400 nm (cm^−1)	5 × 10^5	1.3 × 10^6
Absorptivity at 600 nm (cm^−1)	3.5 × 10^4	7.5 × 10^4
Activation energy (eV)	0.8	0.76
Band gap (eV)	1.8	1.67