Simulation and Experimental Study of Photogeneration and Recombination in Amorphous-Like Silicon Thin Films Deposited by 27.12 MHz Plasma-Enhanced Chemical Vapor Deposition

Table 3

The minimum set of input parameters used in our simulation work.

Device parameter	Value
Device area (um^2)	1
Average haze (%)	18
Exterior rear reflectance (%)	95
Light source	One sun (AM 1.5, 100 mW/cm^2)
Layer parameters	p-layer	i-layer	n-layer
Thickness (nm)	10	200–400	10
Doping concentration (cm^−3)	1 × 10^18	1 × 10^10	1 × 10^19
Mobility gap (eV)	1.92	1.67	1.7
Electron mobility (cm^2/Vs)	8	4	8
Hole mobility (cm^2/Vs)	2	0.7	2
Effective DOS in CB (cm^−3)	2.0 × 10^20	2.0 × 10^20	2.0 × 10^20
Effective DOS in VB (cm^−3)	2.0 × 10^20	2.0 × 10^20	2.0 × 10^20
Dielectric constant	11.9	11.9	11.9
Electron affinity (eV)	3.9	4	4
Tail state (cm^−3)	10^20	10^20	10^20
Gaussian-state (cm^−3)	5 × 10^16	5 × 10^16	5 × 10^16