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International Journal of Photoenergy
Volume 2013, Article ID 752012, 7 pages
Research Article

Growth of CZTS Thin Films by Cosputtering of Metal Targets and Sulfurization in H2S

CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India

Received 24 May 2013; Accepted 12 July 2013

Academic Editor: Raghu N. Bhattacharya

Copyright © 2013 N. Muhunthan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Copper zinc tin sulfide (CZTS) is an emerging thin film photovoltaic material. Chemical composition and phase purity are important factors which decide the quality of the film for photovoltaic applications. In the present work, we report the results of the morphological, structural, optical, and electrical characterizations of Cu2ZnSnS4 thin films, synthesized by sulfurizing magnetron cosputtered Cu2ZnSn thin films in ambient H2S. To the best of our knowledge, this is the first report on CZT deposition by cosputtering from Cu, Zn, and Sn targets and sulfurizing it in ambient H2S for making CZTS thin films. GIXRD and Raman study results showed that the film was kesterite CZTS. Optical absorbance studies revealed a band gap value of ~1.5 eV for CZTS thin film. Results of the Hall effect measurements are also reported.