Research Article
Growth of CZTS Thin Films by Cosputtering of Metal Targets and Sulfurization in H2S
Table 1
Different sputtering methods used for depositing CZTS thin films.
| Sputtering methods | Targets | Sulfurization conditions | References |
| RF cosputtering | Cu, ZnS, SnS | H2S (20%) + N2 at 580°C for 3 h | [7] | RF sputtering | CZTS (sintered with Cu2S : ZnS : SnS2 = 1 : 1 : 1) | Annealed at 400°C/30 min during deposition | [8] | Dc reactive sputtering | Cu : Zn : Sn = 2 : 1 : 1 (H2S + Ar) at 500°C for 60 min | — | [12] | Sputtering (layer by layer) | Cu, Zn, Sn | S at 250°C, film at 570°C for 20 min | [13] | RF cosputtering | Cu2S, ZnS, SnS2 | Ar + S2 (g) at 250–400°C for 1 h | [14] | RF cosputtering | CuSn (60 : 40), ZnS | S (2 mg) at 520°C for 1 h | [15] | Reactive sputtering (50% H2S/Ar) | Cu, Zn, Sn | Annealed at 40 mtorr, 550°C 10% H2S/Ar mixture | [16] | Simultaneous RF sputtering | Cu2S, ZnS, SnS2 | Annealed under sulfur vapor; sulfurization temp was 550, 600, and 650°C | [17] | Simultaneous (DC, RF) sputtering | Cu, ZnS, SnS | H2S diluted with 97% N2, annealed at 500°C for 10 min | [18] |
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