International Journal of Photoenergy / 2013 / Article / Fig 1

Research Article

RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

Figure 1

Minority carrier lifetime mappings and PL images of  mm2 CZ wafers passivated by RF magnetron sputtered aluminum oxide at different sputtering powers and after a 30 min postannealing at 500°C in N2 ambient. Upper row: minority carrier lifetime mappings. Lower row: PL images.
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