International Journal of Photoenergy / 2013 / Article / Fig 4

Research Article

RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

Figure 4

The minority carrier lifetime and the refractive index as related to the radius of the wafer passivated by RF sputtering aluminum oxide at 1000 W and after a 30 min postannealing at 500°C in N2 ambient.
792357.fig.004

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