International Journal of Photoenergy / 2013 / Article / Fig 5

Research Article

RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

Figure 5

The XPS element composition depth profile of a sputtered aluminum oxide film at the power of 1000 W and after postannealing at 500°C in N2 ambient for 30 min as related to the etch time. The vertical dashed lines mark the approximate location of the interfacial layer between the aluminum oxide film and Si substrate.
792357.fig.005

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