International Journal of Photoenergy / 2013 / Article / Fig 5

Research Article

RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

Figure 5

The XPS element composition depth profile of a sputtered aluminum oxide film at the power of 1000 W and after postannealing at 500°C in N2 ambient for 30 min as related to the etch time. The vertical dashed lines mark the approximate location of the interfacial layer between the aluminum oxide film and Si substrate.

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