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International Journal of Photoenergy
Volume 2013, Article ID 936364, 6 pages
http://dx.doi.org/10.1155/2013/936364
Research Article

The Effect of Doping Ratios on Structure, Composition, and Electrical Properties of Absorber Formed by Thermal Sintering

1Department of Photonics Engineering, Yuan Ze University, 135 Yuan Tung Road, Chungli 320, Taiwan
2Department of Physics, Fu Jen Catholic University, 510 Zhongzheng Road, Xinzhuang District, New Taipei 242, Taiwan

Received 30 August 2013; Revised 15 October 2013; Accepted 16 October 2013

Academic Editor: David Lee Phillips

Copyright © 2013 Chung Ping Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Chalcopyrite compounds of copper indium gallium diselenide (CIGS) absorber were fabricated by using binary-particle ( , , and ) precursors with thermal sintering method. The binary-particle ink was firstly prepared by milling technology and then printed onto a soda lime glass substrate, which was baked at a low temperature to remove solvents and form a dry precursor. Following milling, the average particle size of agglomerated CIGS powder is smaller than 1.1 μm. Crystallographic, stoichiometric, and electrical properties of precursor CIGS films with various doping amounts of had been widely investigated by using thermal sintering in a nonvacuum environment without selenization. Analytical results reveal that the CIGS absorption layer prepared with a doping ratio of 3 has a chalcopyrite structure and favorable composition. The mole ratio of Cu : In : Ga : Se of this sample was 1.03 : 0.49 : 0.54 : 1.94, and related ratios of Ga/(In + Ga) and Cu/(In + Ga) were 0.52 and 0.99, respectively. The resistivity and carrier concentration were 3.77 ohm-cm and 1.15 E  +   .