International Journal of Photoenergy / 2013 / Article / Tab 1

Research Article

The Effect of Doping Ratios on Structure, Composition, and Electrical Properties of Absorber Formed by Thermal Sintering

Table 1

Data of CIGS samples sintered at various doping ratios of Ga2Se3.

ParameterSamples
CISCIGS-1CIGS-2CIGS-3CIGS-4

Cu2Se : In2Se3: Ga2Se31 : 5.67 : 01 : 5.67 : 11: 5.67: 21 : 5.67 : 31 : 5.67 : 4
Cu (at.%)24.8030.8628.3225.6721.01
In (at.%)25.1216.7015.4412.3610.48
Ga (at.%)0.004.357.0913.5617.93
Se (at.%)50.0848.0949.1548.4150.59
Mole ratio of Cu0.991.231.131.030.84
Mole ratio of In1.000.670.620.490.42
Mole ratio of Ga0.000.170.280.540.72
Mole ratio of Se2.01.921.971.942.02
Ga/(In + Ga)0.000.210.310.520.63
Cu/(In + Ga)0.991.471.260.990.74
Resistively (ohm-cm)44.80.4086.893.7741.8
Carrier concentration (cm−3)
(112) plane26.575°26.675°26.975°27.075°27.175°
(220)/(204) plane44.175°44.425°44.725°44.975°45.125°
(312)/(116) plane52.325°52.575°53.125°53.325°53.525°

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