Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying

<table>(a) Typical current-voltage characteristics of ZnO:YAG/silicon nanostructure diode. The inset shows the cross-section of the completed structure of the ZnO:YAG/silicon nanostructure diode. (b) The current-voltage (<svg height="11.375" id="M27" style="vertical-align:-0.20064pt" version="1.1" viewbox="0 0 26.2125 11.375" width="26.2125" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M414 650l-6 -28q-63 -4 -78.5 -17.5t-27.5 -71.5l-77 -416q-11 -58 0.5 -71.5t77.5 -17.5l-5 -28h-275l8 28q63 4 79.5 18.5t27.5 70.5l80 416q11 57 -2 71t-81 18l6 28h273z" id="x1D43C"></path></g><g transform="matrix(.017,-0,0,-.017,7.491,11.112)"><path d="M300 253l-14 -55h-229l14 55h229z" id="x2D"></path></g><g transform="matrix(.017,-0,0,-.017,13.543,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
</svg>) characteristics of Ni/Ag/ZnO:YAG and Ni/Ag/p-Si junctions, respectively.</table>

International Journal of Photoenergy

fig8

Figure 8

Figure 8: Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying 