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International Journal of Photoenergy
Volume 2014, Article ID 135725, 5 pages
http://dx.doi.org/10.1155/2014/135725
Research Article

Origin of Difference in Photocatalytic Activity of ZnO (002) Grown on a- and c-Face Sapphire

1Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics & Electronics, Henan University, Kaifeng 475004, China
2Institute of Physics for Microsystems, Henan University, Kaifeng 475004, China

Received 9 October 2013; Revised 5 February 2014; Accepted 10 February 2014; Published 12 March 2014

Academic Editor: Pramod H. Borse

Copyright © 2014 Guoqiang Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Supplementary Material

Figure S1. (a) AFM images of sameple on a- (left) and c-face (right) sapphire.

Figure S2. UV-vis absorption spectra absorption spectra (II) of ZnO thin films grown on a-plane and c-plane sapphire. The inset is the plot of (αhν)2 vs. hν.

  1. Supplementary Material