Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells
Variation of resistivity, , and mobility, , as a function of ETP-CVD ZnO:Al layer thickness for (a) low thermal budget and (b) high thermal budget conditions. Note that resistivity of the sputtered ZnO:Al films (650 nm thick, used for the reference cell) was ~8 × 10−4 Ω·cm. Sheet resistances () are indicated next to the resistivity data points.
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