Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells

Figure 1

Variation of resistivity, 𝜌, and mobility, 𝜇, as a function of ETP-CVD ZnO:Al layer thickness for (a) low thermal budget and (b) high thermal budget conditions. Note that resistivity of the sputtered ZnO:Al films (650 nm thick, used for the reference cell) was ~8 × 10⁻⁴ Ω·cm. Sheet resistances (Ω/□) are indicated next to the resistivity data points.

(a)

(b)