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International Journal of Photoenergy
Volume 2014, Article ID 304580, 4 pages
http://dx.doi.org/10.1155/2014/304580
Research Article

Characterization of a-Si:H/c-Si Heterojunctions by Time Resolved Microwave Conductivity Technique

1Solar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, Thailand
2LPICM, CNRS-Ecole Polytechnique, Route de Saclay, 91128 Palaiseau, France
3Total New Energies, 24 Cours Michelet, La Défense 10, 92069 Paris La Défense, France

Received 17 December 2013; Revised 8 January 2014; Accepted 27 January 2014; Published 3 March 2014

Academic Editor: Peter Rupnowski

Copyright © 2014 Amornrat Limmanee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Amornrat Limmanee, Joaquim Nassar, Igor P. Sobkowicz, et al., “Characterization of a-Si:H/c-Si Heterojunctions by Time Resolved Microwave Conductivity Technique,” International Journal of Photoenergy, vol. 2014, Article ID 304580, 4 pages, 2014. https://doi.org/10.1155/2014/304580.