Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.216pt;width:14.1125px;" id="M1" height="10.725" version="1.1" viewBox="0 0 14.1125 10.725" width="14.1125">
	
		
			<g transform="matrix(.022,-0,0,-.022,.062,10.4)"><path id="x1D736" d="M505 450h125l-163 -259q-1 -4 -1 -12q0 -19 1 -23q9 -98 41 -98q36 0 58 76l24 -7q-34 -139 -121 -139q-32 0 -57.5 24t-31.5 55q-72 -77 -181 -77q-73 0 -114 44t-41 124q0 118 79 210q79 93 197 93q51 0 86 -27t50 -71zM369 281q0 141 -62 141q-43 0 -95 -84
q-52 -82 -52 -195q0 -50 15 -83t42 -33q35 0 79 57q43 58 67 121q6 35 6 76z"></path></g>

		
	
</svg>-Si:H Thin Film Solar Cells

<table>Etching rate of the FZO thin films as a function of HCl solution concentration.</table>

International Journal of Photoenergy

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Figure 4

Figure 4: Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.216pt;width:14.1125px;" id="M1" height="10.725" version="1.1" viewBox="0 0 14.1125 10.725" width="14.1125">
	
		
			<g transform="matrix(.022,-0,0,-.022,.062,10.4)"><path id="x1D736" d="M505 450h125l-163 -259q-1 -4 -1 -12q0 -19 1 -23q9 -98 41 -98q36 0 58 76l24 -7q-34 -139 -121 -139q-32 0 -57.5 24t-31.5 55q-72 -77 -181 -77q-73 0 -114 44t-41 124q0 118 79 210q79 93 197 93q51 0 86 -27t50 -71zM369 281q0 141 -62 141q-43 0 -95 -84
q-52 -82 -52 -195q0 -50 15 -83t42 -33q35 0 79 57q43 58 67 121q6 35 6 76z"></path></g>

		
	
</svg>-Si:H Thin Film Solar Cells 

International Journal of Photoenergy

Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n -Si:H Thin Film Solar Cells

Figure 4