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International Journal of Photoenergy
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International Journal of Photoenergy
/
2014
/
Article
/
Tab 1
/
Research Article
Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n
-Si:H Thin Film Solar Cells
Table 1
value,
value, and F.F. value of the fabricated amorphous silicon thin film solar cells.
FZO parameters
Abbreviated
(V)
(mA/cm
2
)
F.F.
Efficiency (%)
as-deposited
A-FZO
0.855
7.380
0.558
3.52
0.2% HCl
A2-FZO
0.843
8.394
0.585
4.14
0.5% HCl
A5-FZO
0.846
7.942
0.570
3.83
plasma treated
P-A-FZO
0.854
7.692
0.552
3.63
0.2% HCl + plasma treated
P-A2-FZO
0.840
8.764
0.578
4.26
0.5% HCl + plasma treated
P-A5-FZO
0.850
8.109
0.574
3.95