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International Journal of Photoenergy
Volume 2014, Article ID 491475, 8 pages
Research Article

Crystalline Silicon Solar Cells with Thin Silicon Passivation Film Deposited prior to Phosphorous Diffusion

1Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
2Jiangsu Aide Solar Energy Technology Co., Ltd., Xuzhou 221121, China

Received 25 May 2014; Revised 9 July 2014; Accepted 14 July 2014; Published 10 August 2014

Academic Editor: Chao-Rong Chen

Copyright © 2014 Ching-Tao Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We demonstrate the performance improvement of p-type single-crystalline silicon (sc-Si) solar cells resulting from front surface passivation by a thin amorphous silicon (a-Si) film deposited prior to phosphorus diffusion. The conversion efficiency was improved for the sample with an a-Si film of ~5 nm thickness deposited on the front surface prior to high-temperature phosphorus diffusion, with respect to the samples with an a-Si film deposited on the front surface after phosphorus diffusion. The improvement in conversion efficiency is 0.4% absolute with respect to a-Si film passivated cells, that is, the cells with an a-Si film deposited on the front surface after phosphorus diffusion. The new technique provided a 0.5% improvement in conversion efficiency compared to the cells without a-Si passivation. Such performance improvements result from reduced surface recombination as well as lowered contact resistance, the latter of which induces a high fill factor of the solar cell.