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International Journal of Photoenergy
Volume 2014, Article ID 568648, 8 pages
http://dx.doi.org/10.1155/2014/568648
Research Article

The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se2 Absorber Layers Prepared by Annealing Stacked Metallic Precursors

1Department of Mechanical Engineering, Lunghwa University of Science and Technology, Taoyuan 33306, Taiwan
2Department of Mechanical Engineering, China University of Science and Technology, Taipei 11581, Taiwan

Received 24 February 2014; Revised 7 May 2014; Accepted 7 May 2014; Published 11 June 2014

Academic Editor: Ho Chang

Copyright © 2014 Chia-Ho Huang and Dong-Cherng Wen. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Chia-Ho Huang and Dong-Cherng Wen, “The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se2 Absorber Layers Prepared by Annealing Stacked Metallic Precursors,” International Journal of Photoenergy, vol. 2014, Article ID 568648, 8 pages, 2014. https://doi.org/10.1155/2014/568648.