The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se₂ Absorber Layers Prepared by Annealing Stacked Metallic Precursors

Figure 10

(a) Cross-sectional and (b) top-view SEM images of CIGS film selenized at 550°C for 20 min.

(a)

(b)