The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se₂ Absorber Layers Prepared by Annealing Stacked Metallic Precursors

Figure 6

Cross-sectional and top-view SEM images of the CIGS films selenized at (a), (b) the lowest (1 Torr), (c) and (d) 100 Torr, and (e) and (f) the highest Ar pressure (300 Torr).

(a)

(b)

(c)

(d)

(e)

(f)