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International Journal of Photoenergy
Volume 2014, Article ID 569763, 6 pages
Research Article

Effect of Mn Doping on Properties of CdS Quantum Dot-Sensitized Solar Cells

Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, Ministry of Education, Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, School of Instrumentation Science and Optoelectronics Engineering, Beijing Information Science and Technology University, Jianxiang Qiao Campus, Beijing 100101, China

Received 4 April 2014; Accepted 4 July 2014; Published 17 July 2014

Academic Editor: Chuanyi Wang

Copyright © 2014 Tianxing Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Quantum dot-sensitized solar cells (QDSSCs) have received extensive attention in recent years due to their higher theoretical conversion efficiency and lower production costs. However, the photoelectric conversion efficiency of QDSSCs is still lower than the DSSCs because of the severe recombination of electrons of quantum dots conduction band. In order to improve the photoelectric conversion efficiency of QDSSCs, impurity element Mn2+ is doped into the precursor solution of cadmium sulfide (CdS). By optimizing the experimental parameters, the photoelectric conversion efficiency of QDSSCs can be greatly improved. For the deposition of a fixed number of six times, the photoelectric conversion efficiency shows the maximum value (1.51%) at the doped ratio of 1 : 10.