Effect of Multijunction Approach on Electrical Measurements of Silicon and Germanium Alloy Based Thin-Film Solar Cell Using AMPS-1D

Table 1

Parameters information for i-layers.

Properties	Material
	Crystalline Si	Crystalline Si0.75Ge0.25	Crystalline Si0.50Ge0.50	Crystalline Si0.25Ge0.75	Crystalline Ge	Amorphous Si:H [15]
Dielectric constant	11.8	12.93	13.95	14.98	16.0	11.9
Mobility of electron (cm^2/V-s)	1500	2100	2700	3300	3900	20
Mobility of holes (cm^2/V-s)	450	812	1175	1537	1900	2
Energy gap (eV)	1.12	0.96	0.83	0.73	0.66	1.72
Intrinsic carrier concentration 𝑛i (cm^−3)	1.45×10^10	8.3×10^10	4.11×10^11	1.2×10^12	2.4×10^13
Effective density of states in valence band, 𝑁v (cm^−3)	1.04×10^19	9.3×10^18	8.2×10^18	7.1×10^18	6.0×10^18	2.5×10^20
Effective density of states in conduction band, 𝑁c (cm^−3)	2.8×10^19	7.3×10^18	1.46×10^18	3.3×10^17	1.04×10^19	2.5×10^20
Electron affinity (eV)	4.05	4.0375	4.025	4.0125	4.0	3.8
Thickness (nm)	2000	1500	900	50	50