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International Journal of Photoenergy
Volume 2014, Article ID 670438, 5 pages
Research Article

SiO2 Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells

1School of Electrical Engineering, Guangdong Mechanical & Electrical College, Guangzhou 510515, China
2Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technologies, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China
3Key Laboratory of Automobile Components and Vehicle Technology in Guangxi, Guangxi University of Science and Technology, Liuzhou 545006, China

Received 1 May 2014; Revised 14 July 2014; Accepted 18 July 2014; Published 17 August 2014

Academic Editor: Tao Xu

Copyright © 2014 Minghua Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In this work we prepared double-layer antireflection coatings (DARC) by using the SiO2/SiNx:H heterostructure design. SiO2 thin films were deposited by electron-beam evaporation on the conventional solar cell with SiNx:H single-layer antireflection coatings (SARC), while to avoid the coverage of SiO2 on the front side busbars, a steel mask was utilized as the shelter. The thickness of the SiNx:H as bottom layer was fixed at 80 nm, and the varied thicknesses of the SiO2 as top layer were 105 nm and 122 nm. The results show that the SiO2/SiNx:H DARC have a much lower reflectance and higher external quantum efficiency (EQE) in short wavelengths compared with the SiNx:H SARC. A higher energy conversion efficiency of 17.80% was obtained for solar cells with SiO2 (105 nm)/SiNx:H (80 nm) DARC, an absolute conversion efficiency increase of 0.32% compared with the conventional single SiNx:H-coated cells.