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International Journal of Photoenergy
Volume 2014, Article ID 720560, 6 pages
Research Article

The Influence of Hydrogen on the Properties of Zinc Sulfide Thin Films Deposited by Magnetron Sputtering

College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China

Received 7 October 2013; Accepted 16 March 2014; Published 7 April 2014

Academic Editor: Fahrettin Yakuphanoglu

Copyright © 2014 Hang Xu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Zinc sulfide thin films have been deposited with hydrogen in Ar and Ar+H2 atmosphere by radio frequency magnetron sputtering. The thickness, structural properties, composition, surface morphology, and optical and electrical properties of the films have been investigated. Effect of hydrogen on the properties of the film was studied. The results showed that hydrogen leads to better crystallinity and larger crystallite size of ZnS polycrystalline films. The band gaps of the films in Ar+H2 are about 3.48 eV compared with 3.24 eV without hydrogen. It is also demonstrated that hydrogen can result in a better stoichiometric composition of the films.