Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

<table>Depth resolved (a) O and (b) C concentrations obtained from TOF SIMS. The respective elemental content in a-Si host is calculated based on standard c-Si atomic concentration. Both O and C concentrations show increasing trend with respect to CO<sub>2</sub> partial pressure during deposition. The highest C content achievable in this work is about 0.1 at.%.</table>

International Journal of Photoenergy

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Figure 6

Figure 6: Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide 

Figure 6 | Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide 