Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

Table 2

Bonding types/modes and corresponding wavenumbers investigated by FTIR in this paper.

Bonding type	Mode wavenumber (cm^−1)
	Wagging/rocking	Bending	Stretching
Si–O–Si	—	810^a	—
Si–H(Si3)	640^b	—	2000–2200^c
Si–H(Si2O)	—	—	1054^d,e
Si–H(SiO2)	—	—	1107^d,e
Si–H(SiO3)	—	—	1156^d,e
(SiH2)𝑛	—	845^f	—
	—	883^f	—

aReference [34].
bReference [35].
cReference [36].
dReference [15].
eReference [37].
fReference [38].