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International Journal of Photoenergy
Volume 2014, Article ID 762576, 5 pages
http://dx.doi.org/10.1155/2014/762576
Research Article

Characterization of Cu1.4Te Thin Films for CdTe Solar Cells

College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China

Received 17 February 2014; Accepted 28 April 2014; Published 15 May 2014

Academic Editor: Prakash Basnyat

Copyright © 2014 Guangcan Luo et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The copper telluride thin films were prepared by a coevaporation technique. The single-phase Cu1.4Te thin films could be obtained after annealing, and annealing temperature higher than 220°C could induce the presence of cuprous telluride coexisting phase. Cu1.4Te thin films also demonstrate the high carrier concentration and high reflectance for potential photovoltaic applications from the UV-visible-IR transmittance and reflectance spectra, and Hall measurements. With contacts such as Cu1.4Te and Cu1.4Te/CuTe, cell efficiencies comparable to those with conventional back contacts have been achieved. Temperature cycle tests show that the Cu1.4Te contact buffer has also improved cell stability.