Thermal Oxidation Preparation of Doped Hematite Thin Films for Photoelectrochemical Water Splitting
Figure 4
Photocurrent density versus bias potential of (a) Sn- (b) Ge-doped hematite photoanodes. All samples were measured in 1.0 M NaOH electrolyte under 300 W Xe lamp irradiation with an AM 1.5 filter. Inset of (a) the photocurrent density at 1.23 V versus RHE as a function of Sn concentration.
