Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes
Figure 1
(a) Cross-sectional SEM image of cone-shaped PSS without treatment by wet etching and plane-view SEM images of cone-shaped PSSs subjected to wet etching for (b) 3 min, (c) 5 min, (d) 7 min, and (e) 10 min.
