Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes
Figure 3
Cross-sectional TEM images of the GaN epilayers grown on the PSSs subjected to wet etching for (a) 0 min, (b) 3 min, and (c) 10 min. (d) Selected area electron diffraction pattern of the right protrusion in (b).
