Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes
Figure 4
Cross-sectional SEM images (a) before and (b) after epilayer growth on PSS subjected to wet etching for 3 min and (c) SEM image taken at the cone pattern in (b) (marked with green circle) with higher magnification.
