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International Journal of Photoenergy
Volume 2014, Article ID 819637, 6 pages
http://dx.doi.org/10.1155/2014/819637
Research Article

Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach

1Indian Institute of Technology, Bombay (IIT-B) Powai, Maharashtra 400076, India
2Academy of Scientific and Innovative Research, New Delhi 110001, India
3Council of Scientific and Industrial Research-Central Electronics Engineering Research Institute (CSIR-CEERI) Pilani, Rajasthan 333031, India
4School of Solar Energy, Pandit Deendayal Petroleum University (PDPU), Gandhinagar, Gujarat 382007, India

Received 29 May 2013; Accepted 13 March 2014; Published 10 April 2014

Academic Editor: Adel M. Sharaf

Copyright © 2014 Aniruddha Singh Kushwaha et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We have conducted numerical simulation of p-GaN/In0.12Ga0.88N/n-GaN, p-i-n double heterojunction solar cell. The doping density, individual layer thickness, and contact pattern of the device are investigated under solar irradiance of AM1.5 for optimized performance of solar cell. The optimized solar cell characteristic parameters for cell area of 1  × 1 mm2 are open circuit voltage of 2.26 V, short circuit current density of 3.31 mA/cm2, fill factor of 84.6%, and efficiency of 6.43% with interdigitated grid pattern.