International Journal of Photoenergy / 2014 / Article / Fig 2

Research Article

Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach

Figure 2

Effect of p-GaN layer thickness and doping concentrations on GaN/InGaN solar cell characteristic parameters: (a) short circuit current density, (b) open circuit voltage, (c) fill factor, and (d) efficiency.
819637.fig.002a
(a)
819637.fig.002b
(b)
819637.fig.002c
(c)
819637.fig.002d
(d)