International Journal of Photoenergy / 2014 / Article / Tab 1

Research Article

Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach

Table 1

Material parameter used in simulation.

ParameterGaNIn0.12Ga0.88NInN

Band gap (ev) [10]3.42 2.93 0.7
Lattice constant (A°) [11]3.183.233.6
Minority carrier life time (ns) [21]1 1 1
Spontaneous polarization (sheet charge per cm2) [22]
Piezoelectric polarization (sheet charge per cm2) [22]0
Auger coefficient n-type [11]
Auger coefficient p-type [11]