Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach

Table 1

Material parameter used in simulation.

Parameter	GaN	In0.12Ga0.88N	InN
Band gap 𝐸𝑔 (ev) [10]	3.42	2.93	0.7
Lattice constant (A°) [11]	3.18	3.23	3.6
Minority carrier life time (ns) [21]	1	1	1
Spontaneous polarization (sheet charge per cm^2) [22]	−2.12𝑒13	−2.18𝑒13	−2.63𝑒13
Piezoelectric polarization (sheet charge per cm^2) [22]	0	−8.87𝑒12	9.98𝑒13
Auger coefficient n-type [11]	1𝑒−34	1𝑒−34	1𝑒−34
Auger coefficient p-type [11]	1𝑒−34	1𝑒−34	1𝑒−34