Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells

Figure 2

Approach of the in situ control of MJ SC parameters (layer thicknesses, solid solution composition, doping levels and homointerface detection, heterointerface quality, etc.) based on simultaneous measurements of the time dependencies of short-wavelength (on 3.8 eV) RA and long-wavelength (on 2.1 eV) reflection signals (lower part) and SEM image of cross-section of GaInP/GaInAs/Ge MJ SC.