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International Journal of Photoenergy
Volume 2014, Article ID 872849, 5 pages
http://dx.doi.org/10.1155/2014/872849
Research Article

Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

1Solar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, Thailand
2PTT Research & Technology Institute, PTT Public Company Limited, 70 Moo2 Phahonyothin Road, Sanubtup, Wangnoi, Ayutthaya 13170, Thailand

Received 27 November 2013; Revised 3 June 2014; Accepted 4 June 2014; Published 22 June 2014

Academic Editor: Mahmoud M. El-Nahass

Copyright © 2014 Jaran Sritharathikhun et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-c-SiO:H) films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-c-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ) solar cells. A p-c-SiO:H film with a wide optical band gap (E04), 2.1 eV, can be obtained by increasing the CO2/SiH4 ratio; however, the tradeoff between E04 and dark conductivity must be considered. The CO2/SiH4 ratio of the p-c-SiO:H emitter layer also significantly affects the performance of the solar cells. Compared to the cell using p-c-Si:H (CO2/SiH4 = 0), the cell with the p-c-SiO:H emitter layer performs more efficiently. We have achieved the highest efficiency of 18.3% with an open-circuit voltage () of 692 mV from the cell using the p-c-SiO:H layer. The enhancement in the and the efficiency of the solar cells verified the potential of the p-c-SiO:H films for use as the emitter layer in c-Si-HJ solar cells.