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International Journal of Photoenergy
Volume 2014 (2014), Article ID 906037, 8 pages
http://dx.doi.org/10.1155/2014/906037
Research Article

Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

1Department of Optics and Photonics, National Central University, Jhongli 32001, Taiwan
2Graduate Institute of Electronics Engineering, National Taiwan University, Jhongli 32001, Taiwan
3Optical Science Center, National Central University, Jhongli 32001, Taiwan
4Institute of Materials Science and Engineering, National Central University, Jhongli 32001, Taiwan
5Department of Mechanical Engineering, National Central University, Jhongli 32001, Taiwan

Received 4 June 2014; Revised 25 July 2014; Accepted 26 July 2014; Published 10 August 2014

Academic Editor: Niyaz Mohammad Mahmoodi

Copyright © 2014 Teng-Hsiang Chang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [4 citations]

The following is the list of published articles that have cited the current article.

  • Hui-Song Li, Feng Qiu, Zheng-Hang Xin, Rong-Fei Wang, Jie Yang, Jin Zhang, Chong Wang, and Yu Yang, “Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing,” Japanese Journal of Applied Physics, vol. 55, no. 6, pp. 061302, 2016. View at Publisher · View at Google Scholar
  • Chao-Yu Lin, Chien-Chieh Lee, Chao-Chia Cheng, Jenq-Yang Chang, and Wei-Cheng Kuo, “Strain-controlled of compressive/tensile Ge epilayers on Si by electron cyclotron resonance chemical vapor deposition,” ECS Journal of Solid State Science and Technology, vol. 5, no. 9, pp. P529–P533, 2016. View at Publisher · View at Google Scholar
  • Ming Jay Lee, Mount-Learn Wu, I-Yu Tsao, Jenq-Yang Chang, Wei-Cheng Kuo, and Chien-Chieh Lee, “Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors,” Solid-State Electronics, vol. 130, pp. 41–44, 2017. View at Publisher · View at Google Scholar
  • Krista R. Khiangte, Jaswant S. Rathore, Ravindra S. Pokharia, Apurba Laha, Sudipta Das, Rajveer S. Fandan, and Suddhasatta Mahapatra, “On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy,” Current Applied Physics, vol. 17, no. 3, pp. 327–332, 2017. View at Publisher · View at Google Scholar