Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

<table>The imaginary part of the pseudodielectric function of Ge epilayers deposited on c-Si (100) substrates for various working pressures as measured by spectroscopy ellipsometry. The spectrum of bulk c-Ge (100) is also displayed as a reference to compare the crystal quality with Ge epilayers.</table>

International Journal of Photoenergy

fig4

Figure 4

Figure 4: Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition 

Figure 4 | Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition 