Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

<table>High resolution XRD rocking curve of the Ge (004) peak with various working pressures. The dash line is the position of unstrained Ge (004) position calculated by Bragg’s law. The inset shows the peak intensity and full width at half maximum of the Ge (004) peak from XRD patterns.</table>

International Journal of Photoenergy

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Figure 5

Figure 5: Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition 

Figure 5 | Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition 