Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition
Figure 6
Raman spectra for c-Ge wafer and different Ge epilayer grown by different working pressures. The dash line shows that the peak position of c-Ge wafer is 300.90 cm−1. The inset shows the FWHM of Ge TO mode of Ge epilayers compared with the FWHM of c-Ge wafer (dash line).
