Inverted Metamorphic III–V Triple-Junction Solar Cell with a 1 eV CuInSe₂ Bottom Subcell

Figure 1

Proposed (a) growth sequence and (b) final design of the inverted metamorphic GaInP/Ga(In)As/CuInSe₂ structure after a selective wet etch of an AlAs release layer.

(a)

(b)