Inverted Metamorphic III–V Triple-Junction Solar Cell with a 1 eV CuInSe₂ Bottom Subcell

Figure 4

(a) Simulated energy band diagram of the GaInP/Ga(In)As/CuInSe₂ 3J under illumination conditions and (b) a closeup of the energy band diagram at the compositionally graded buffer region composed of GaInP including the overshoot layer and the CuInSe₂ based bottom subcell including a highly doped CuInSe₂ back surface field (BSF).

(a)

(b)