Figure 6: (a) Simulated EQE and (b) J-V characteristics of the CuInSe2 3J for increasing levels of TDDbot in the bottom subcell at 1000 W/m2 intensity and 300 K; a fixed TDDCGB of 106 cm−2 is adopted with SRV of 103 cm/s at the relevant CGB interfaces. The J-V characteristics of the LMM and LM devices are shown for comparison, with the LMM device having a in the active region but a .