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International Journal of Photoenergy
Volume 2014, Article ID 943538, 5 pages
Research Article

Electrochemical Deposition of Te and Se on Flat TiO2 for Solar Cell Application

1Department of Electric Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, Shosha 2167, Himeji, Hyogo 671-2280, Japan
2Energy Technology Laboratories, Osaka Gas Co., Ltd., 6-19-9 Torishima, Konohana-Ku, Osaka 554-0051, Japan

Received 10 November 2013; Revised 8 April 2014; Accepted 10 April 2014; Published 5 May 2014

Academic Editor: Dionissios Mantzavinos

Copyright © 2014 Seigo Ito et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Te and Se layers were deposited on glass/FTO/flat-TiO2 by electrochemical deposition. The Te-Se-stacked layer was annealed at 200°C, and then, the migration of Te into the Se layer by annealing was confirmed using auger electron spectroscopy (AES), which was performed by Te doping on the Se layer. Au back contact was coated by vacuum deposition on the Te-doped Se layer, resulting in superstrate-structured solar cells of glass/FTO/flat-TiO2/Se-doped Te/Au with a 0.50 V open-circuit voltage, 6.4 mA/cm2 photocurrent density, 0.36 fill factor, and 1.17% conversion efficiency.