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International Journal of Photoenergy
Volume 2014 (2014), Article ID 952528, 8 pages
Research Article

Investigation of Thermal Instability of Additive-Based High-Efficiency Organic Photovoltaics

Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan

Received 15 April 2014; Revised 15 June 2014; Accepted 18 July 2014; Published 10 August 2014

Academic Editor: Harald Hoppe

Copyright © 2014 En-Ping Yao et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Most photovoltaics operate at high temperature under sunlight. In this work, the thermal instability of diiodooctane-based high-efficiency bulk heterojunction (BHJ) organic photovoltaics (OPVs) is studied. The BHJ layers were heated to various temperatures to investigate the changes in their physical properties using atomic force microscopy phase images. The mobilities of the carriers were characterized at various temperatures using the space-charge-limited current method, and the carrier lifetime was calculated by applying impedance spectroscopy to the simulated equivalent circuit of the OPV devices.